MCH6337
mm
Outline Drawing
MCH6337-TL-E, MCH6337-TL-H
Mass (g) Unit
0.008
* For reference
Land Pattern Example
0.4
0.65 0.65
Unit: mm
No. A0959-6/7
相关PDF资料
MCH6341-TL-E MOSFET P-CH 30V 5A MCPH6
MCH6341-TL-H MOSFET P-CH 30V 5A MCPH6
MCH6344-TL-H MOSFET P-CH 30V 2A MCPH6
MCH6421-TL-E MOSFET N-CH 5.5A 20V MCPH6
MCH6431-TL-H MOSFET N-CH 30V 5A MCPH6
MCH6436-TL-E MOSFET N-CH 30V 6A MCPH6
MCH6437-TL-E MOSFET N-CH 20V 7A MCPH6
MCH6444-TL-H MOSFET N-CH 35V 2.5A MCPH6
相关代理商/技术参数
MCH6341 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH6341_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6341-TL-E 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6341-TL-H 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
MCH6341-TL-W 制造商:ON Semiconductor 功能描述:PCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL - PCH 4V DRIVE SERIES
MCH6342 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6342_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6342-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube